Effect of DC Bias Voltage upon Treeing Breakdown in Epoxy Resin under Rectangular Pulse Voltage
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چکیده
منابع مشابه
Voltage Equalization of DC Link capacitors in a CHB-Based PET under the Unbalance Voltage Conditions
The unbalance currents injection by power electronic transformers in order to improve the unbalance voltage conditions of the network causes an imbalanced voltage in the DC link capacitors and creates an active powers inequality in the different phases. In this paper, the proposed control structure independently controls the active power of each phase by modifying the power angle between the vo...
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Weibull distribution has been used widely by many researches around the world especially in the analysis of high voltage experimental data. Unfortunately, the statistical techniques used to analyse the high voltage experimental data are not highly accurate. In view of the foregoing, this paper presents a new statistical approach to analyze the tree inception voltage of silicone rubber and epoxy...
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در طی سالهای اخیراستفاده ازمنابع انرژی تجدید پذیر در شبکه های مدرن بنا به دلایل زیست محیطی و اقتصادی به طور گسترده استفاده شده است همچون نیروگاههای بادی و خورشیدی .ولتاژتولیدی این نیروگاهها اغلب به فرم dc می باشد وادوات الکترونیک قدرت به عنوان مبدل و پل بین شکل موج dc وac استفاده می شوند.این پروسه باعث ایجاد پالسهایی برروی شکل موج خروجی می شود که می تواند وارد تجهیزات قدرت همچون ترانسفورماتور ی...
15 صفحه اولBreakdown Voltage and Its Influencing Factors of Thermally Aged Oil-Impregnated Paper at Pulsating DC Voltage
Breakdown strength is an important electrical property of insulating paper. Oil-impregnated paper of various aging states was prepared. Its breakdown voltage was then measured at pulsating direct current (DC) voltage with various ripple factors, and alternating current (AC) and DC voltage for comparison, respectively. The AC breakdown voltage is the smallest, and pulsating DC (r = 1/5) breakdow...
متن کاملBreakdown Voltage of High-voltage GaN FETs
GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Fundamentals and Materials
سال: 1977
ISSN: 0385-4205,1347-5533
DOI: 10.1541/ieejfms1972.97.156